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DIN 51456:2013-10
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DIN 51456:2013-10
Testing of materials for semiconductor technology - Surface analysis of silicon wafers by multielement determination in aqueous analysis solutions using mass spectrometry with inductively coupled plasma (ICP-MS)More info
This document specifies a test method for surface analysis for the determination of mass fractions of the elements Al (aluminum), As (arsenic), Ba (barium), Be (beryllium), Ca (calcium), Cd (cadmium), Co (cobalt), Cr (chromium), Cu (copper) , Fe (iron), In (indium), K (potassium), Li (lithium), Mg (magnesium), Mn (manganese), Mo (molybdenum), Na (sodium), Ni (nickel), Pb (lead) , Sb (antimony), Sr (strontium), Ti (titanium), V (vanadium), Zn (zinc) and Zr (zirconium) on silicon wafers using ICP-MS.
| Author | DIN |
|---|---|
| Editor | DIN |
| Document type | Standard |
| Format | File |
| ICS | 31.200 : Integrated circuits. Microelectronics
|
| Number of pages | 15 |
| Replace | DIN 51456 (2012-10) |
| Year | 2013 |
| Document history | DIN 51456 (2013-10) |
| Country | Germany |
| Keyword | 51456 |