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JIS H 0609:1999 (R2014)
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JIS H 0609:1999 (R2014)
Test methods of crystalline defects in silicon by preferential etch techniquesMore info
This Standard specifies the detection of crystalline defects in silicon by preferential etch techniques with hexavalent-chromium-free etching solution. The objects are single crystal wafer, epitaxial wafer, and its thermally oxidized wafers. The surface crystal orientations are {100}, {111} and {511}.
| Author | JSA |
|---|---|
| Editor | JSA |
| Document type | Standard |
| Format | File |
| Confirmation date | 2014-10-20 |
| ICS | 31.200 : Integrated circuits. Microelectronics
77.120.99 : Other non-ferrous metals and their alloys |
| Number of pages | 20 |
| Replace | JIS H 0609 (1994-01-01) |
| Year | 1990 |
| Document history | JIS H 0609 (1999-11-20) |
| Country | Japan |
| Keyword | JIS 0609;0609;JIS H 0609-1999 |