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JIS C 2162:2010 (R2014)
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JIS C 2162:2010 (R2014)
Test method of long-term reliability of gate insulator for SiC devices at high temperatureMore info
This Japanese Industrial Standard specifies the matters related to the long-term reliability test of gate insulator for silicon carbide (SiC) devices at high temperature, namely, the test apparatus used, the structure of a sample, the method for eliminating the effect of defects in an SiC substrate and the test procedure.
| Author | JSA |
|---|---|
| Editor | JSA |
| Document type | Standard |
| Format | File |
| Confirmation date | 2014-10-20 |
| ICS | 29.035.01 : Insulating materials in general
|
| Number of pages | 10 |
| Year | 2010 |
| Document history | |
| Country | Japan |
| Keyword | JIS 2162;2162 |